CVD・Diffusion・SiC Coating Materials
The CVD materials are indispensable for thin film growth in the semiconductor manufacturing process. In addition to the materials and specifications introduced here, we supply a wide variety of materials with different specifications according to customers` needs.
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| Tetraethyl Orthosilicate (TEOS) | Containers for CVD Materials |
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Product Name | Chemical Name |
Formula | Purity |
|---|---|---|---|
| Tetraethyl Orthosilicate | Tetraethyl Orthosilicate (TEOS) | Si(C2H5O)4 | 99.99999%〜99.999999% |
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Triethyl Borate |
Triethyl Borate(TEB) | B(C2H5O)3 | 99.99999% |
| Triethyl Phosphate | Triethyl Phosphate(TEPO) | PO(C2H5O)3 | 99.99999% |
| Trimethyl Borate | Trimethyl Borate(TMB) | B(CH3O3) | 99.99999% |
| Trimethyl Phosphate | Trimethyl Phosphate(TMPO) | PO(CH3O)3 | 99.99999% |
| Trimethyl Phosphite | Trimethyl Phosphite(TMPI) | P(CH3O)3 | 99.99999% |
| Phosphorus Oxychloride | Phosphorus Oxychloride | POCl3 | 99.9999% |
| Boron Tribromide | Boron Tribromide | BBr3 | 99.9999% |
| Titanium Tetrachloride | Titanium Tetrachloride | TiCl4 | 99.9999% |
| Methyltrichlorosilane | Methyltrichlorosilane | CH3SiCl3 | 99.9999% |
| Silicon Tetrachloride | Silicon Tetrachloride | SiCl4 | 99.9999% |
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